Aluminum nitride (AlN) heaters for CVD/PVD wafer chucks, PECVD susceptors, and ALD chamber temperature control. Thermal conductivity 170–220 W/m·K — 8× higher than Al₂O₃ — delivers ±1°C uniformity across a 300mm wafer.
CVD, PECVD, and ALD thin film processes deposit films with thickness controlled to nanometre precision. Film thickness is proportional to deposition temperature — ±5°C across the wafer means ±5% film thickness variation. AlN heaters achieve ±1°C uniformity, enabling <1% film thickness variation.
Our AlN heaters are precision-machined to ±0.01mm flatness with embedded thermocouple channels for direct PID control. Custom voltages (DC or AC) and resistance profiles optimised for your controller output impedance.
wafer chuck heating
All three failure modes are more severe in Al₂O₃ than in AlN — and all three directly affect wafer yield and device performance.
Specify wafer size, voltage, resistance target, and flatness requirement. We reply within 24h with a DFM review and quote.