Free Samples · 48h Dispatch OEM Manufacturer Since 2014 Reply Within 24h
sales@ceramitell.com · +86 151 9017 9780
Semiconductor & Electronics · High-Purity Al₂O₃

99.99% Al₂O₃ for
semiconductor processes.

High-purity alumina process tubes, diffusion boats, susceptors, and ICP torch components for silicon diffusion furnaces, oxidation furnaces, and analytical instruments. Na contamination <5 ppm — critical for silicon device yield at advanced technology nodes.

≥99.99%
Al₂O₃ Purity
<5 ppm
Na Contamination
1600°C
Max Operating
ISO 9001
Certified
★ Why semiconductor fabs specify 99.99%
The contamination case for ultra-high-purity alumina
99.99%
Al₂O₃ minimum for front-end
<5 ppm
Na — critical yield parameter
100–500 ppm
Na in 99.7% commercial Al₂O₃
12nm
Logic node — zero tolerance for Na
Certifications & Standards
ISO 9001IATF 16949CERoHS · REACHUL Recognized
12nm
Modern logic linewidth — a single Na ion during diffusion causes device failure at this scale
99.99%
Minimum Al₂O₃ purity for front-end semiconductor processing — 99.7% commercial is unacceptable
1600°C
Silicon diffusion furnace temperature — requiring ultra-high-purity ceramic that doesn't contaminate
Na <5 ppm
Our specification — vs 100–500 ppm in standard commercial 99.7% Al₂O₃
01 · The Application

Why 99.99% alumina matters at 12nm.

High-purity Al₂O₃ process tube — silicon diffusion furnace
Replace with product photo

At 12nm and below, metallic contamination of silicon wafers during diffusion and oxidation causes catastrophic yield loss. A single sodium ion on a wafer surface during 1,100°C diffusion creates a device-level defect. Standard 99.7% commercial Al₂O₃ contains 100–500 ppm Na₂O — unacceptable for front-end semiconductor processing.

Our 99.99% Al₂O₃ process tubes are sintered from 99.99% pure powder with Na <5 ppm and transition metals <10 ppm total — the specification required by leading DRAM and logic fab process engineering teams.

Technical Requirements
Al₂O₃ purity≥99.99%
Na contamination<5 ppm
Fe contamination<3 ppm
Max operating temp1,600°C
FormTube / boat / susceptor / ICP torch
02 · Material Selection

99.99% vs 99.7% Al₂O₃ for

semiconductor processing

★ Recommended
Al₂O₃ 99.99% (Semiconductor Grade)
Na <5 ppm · 1,600°C · front-end qualified
  • Na <5 ppm — meets front-end semiconductor process specification
  • 1,600°C operating temperature — full silicon diffusion furnace capability
  • ICP-MS purity cert with every shipment — 15 elements reported
  • Lot traceability to raw powder batch — full chain of custody
  • JIS B 7719 / SEMI M70 standard diffusion tube dimensions
Also Available
Al₂O₃ 99.7% (Commercial Grade)
Na 100–500 ppm · standard industrial use only
  • Lower cost — 30–50% less per piece
  • Adequate for non-semiconductor high-temperature applications
  • Na 100–500 ppm — causes mobile ion contamination at advanced nodes
  • Not suitable for front-end semiconductor processing
Semiconductor fab process tube supply

Qualified in DRAM
and logic fabs.

Semiconductor fab program
  • ICP-MS cert: 15 elements reported with every lot
  • SEMI M70: standard diffusion tube dimensions
  • Cleanroom packaging: Class 1000 option for direct fab delivery
  • Lot traceability: full chain of custody to raw powder batch
  • Custom dimensions: 4-week lead time from drawing
03 · Contamination Failure Modes

How impure alumina damages wafers.

Understanding contamination mechanisms helps justify the 99.99% specification to procurement — the cost difference vs 99.7% is small; the yield impact is not.

01
Na out-diffusion at temperature
Na₂O impurity in 99.7% Al₂O₃ mobilises above 800°C, diffusing out through the process gas atmosphere to the wafer surface. Na in silicon shifts MOSFET threshold voltage, destroying device functionality at advanced nodes.
99.99% fix → Na <5 ppm. Na out-diffusion flux 20–100× lower than 99.7% commercial alumina at equivalent process temperatures.
02
Fe contamination and carrier lifetime
Iron impurities from Fe₂O₃ in low-purity process tubes create deep-level trap states in silicon, reducing minority carrier lifetime — increasing DRAM cell leakage and solar cell efficiency.
99.99% fix → Fe <3 ppm. Minority carrier lifetime impact reduced by >90% vs 99.7% alumina at same process temperature.
03
Particle generation from thermal cycling
Low-density commercial Al₂O₃ tubes microcrack during repeated thermal cycling, generating sub-micron particles that deposit on wafer surfaces.
99.99% fix → high-density sintering (>99% theoretical density). Structural integrity maintained through 10,000+ thermal cycles without microcracking.
04 · Engineering FAQ

Questions from semiconductor process engineers.

What purity documentation is provided?
ICP-MS analysis certificate: Al₂O₃ purity and Na, K, Fe, Ca, Mg, Ti, Cu, Ni, Cr, Zn concentrations. Lot number traceability to raw powder batch. Chain-of-custody documentation available.
Standard diffusion tube dimensions?
JIS B 7719 and SEMI M70 standard OD/ID/length combinations. Common: OD 50/ID 46mm, OD 75/ID 69mm, OD 100/ID 94mm × lengths 1,200–2,000mm. Custom with 4-week lead time.
Cleanroom packaging available?
Yes — Class 1000 cleanroom packaging option for direct fab delivery without re-cleaning. Specify at time of order.
Can you supply ICP-OES torch components?
Yes — 99.99% Al₂O₃ ICP torch tubes, injector tubes, and spray chamber inserts for ICP-OES and ICP-MS instruments. HF cycle resistant — the primary failure mode for quartz ICP torches.
Request a Quote

Ready to spec your high-purity Al₂O₃ process tubes?

Specify tube dimensions (OD/ID/length), quantity, and purity requirement. We reply within 24h with availability and pricing.

  • ICP-MS purity cert — 15 elements, with every lot.
  • JIS B 7719 / SEMI M70 standard dimensions in stock.
  • Cleanroom packaging — Class 1000, direct fab delivery.
  • Full lot traceability to raw powder batch.
Free Samples · Reply in 24h
Request 99.99% Al₂O₃ process tube samples
Specify OD, ID, length, and purity requirement. ICP-MS cert included.